Graphene nanoribbon field-effect transistor at high bias
نویسندگان
چکیده
منابع مشابه
Graphene nanoribbon field-effect transistor at high bias
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, c...
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We present the electron transport in graphene nanoribbons (GNRs) at high electric bias conduction. When graphene is patterned into a few tens of nanometer width of a ribbon shape, the carriers are confined to a quasi-one-dimensional (1D) system. Combining with the disorders in the system, this quantum confinement can lead into a transport gap in the energy spectrum of the GNRs. Similar to CNTs,...
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Graphene nanoribbons with zigzag edges show metallic behavior and are thus considered not appropriate for transistor applications. However, we show that by engineering line defects and using positive substrate impurities one can obtain a suitable effective transport gap at least for analog applications. The transfer and output characteristics of these structures are investigated employing quant...
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The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, very large computing power, low energy delay product and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked tr...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2014
ISSN: 1556-276X
DOI: 10.1186/1556-276x-9-604